| Customization: | Available |
|---|---|
| Mode of Production: | SMT |
| Layers: | Multilayer |
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Figure 1 The outline and dimensions of the LiNbO3 thin film electro-optic modulator chip.
| Name | Range | |
| 1 | Insertion Loss | ≤5dB |
| 2 | Modulation Bandwidth (3 dB) | ≥20GHz(can also provide 40GHZ and 60GHZ) |
| 3 | RF half-wave voltage (@40GHz) | ≤5V |
| 4 | Static half-wave voltage | ≤3V |
| 5 | Operating wavelength | 1520nm~1565nm |
| 6 | Optical return loss | ≤-25dB |
| 7 | Extinction ratio | ≥20dB |
| 8 | RF return loss | ≤-10dB |
| 9 | Maximum input optical power | 100mW |
| 10 | Maximum input RF power | 23dBW |
| 11 | Thermal optical bias half-wave power Pπ | 50mW ( Maximum tolerance voltage for heater 10V) |
| 12 | Operating temperature | -20ºC~50ºC |
| 13 | Storage temperature | -40ºC~80ºC |
| Name | Specification /Dimension | |
| 1 | Input Optical port(close to RF entrance) | C-band mode spot size 4 microns |
| 2 | Output Optical Port | C-band mode spot size 4 microns |
| 3 | RF PAD | S-PAD width 120 microns, G-S pitch 40 microns |
| 4 | Recommended Matching Resistor | 38~43 ohms |
| 5 | DC Pins C,D | Heater positive and negative electrodes, PAD width 300 microns |
FAQ
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